The effect of variation in layer thickness, temperature, production rate of point-defects, and surface recombination coefficient on annihilation processes at interfaces was studied.
It should be noted that (10) allow introducing interface structure features by means of trap concentration for point-defects, [sup.tot][S.sup.([alpha]- [beta]).sub.j], and the surface recombination coefficient, [[alpha].sub.s].
Mozer et al., "Bimolecular
recombination coefficient as a sensitive testing parameter for low-mobility solar-cell materials," Physical Review Letters, vol.
The radiative
recombination coefficient [B.sub.rad] for CIGS is set to [10.sup.-14] [cm.sup.3]/s such that the material is dominated by non-radiative processes.
Material GaAs [A.sub.l0.8] [Ga.sub.0.2]As Band Gap(eV) 1.42 [10] 2.09 [11] Electron affinity (eV) 4.07 [10] 3.53 [11] Dielectric permittivity(relative) 13.18 [10] 10.68 [11] Eelectron mobility ([cm.sup.2]/Vs) Varied [12] 212 [13] Hole mobility ([cm.sup.2]/Vs) Varied [12] 67 [13] Radiative
recombination coefficient 7.20E-10 [10] 7.50E-10 [11] ([cm.sup.3]/Vs) Lattice constant a(A[degrees]) 5.65 [10] 5.64 [13] Absorption coefficient Data from [14] Data from [11] Fig.
Total
recombination coefficients and machine-readable tables for Z=1 to 8," Monthly Notices of the Royal Astronomical Society, vol.
