The effect of variation in layer thickness, temperature, production rate of point-defects, and surface recombination coefficient on annihilation processes at interfaces was studied.
It should be noted that (10) allow introducing interface structure features by means of trap concentration for point-defects, [sup.tot][S.sup.([alpha]- [beta]).sub.j], and the surface recombination coefficient, [[alpha].sub.s].
Mozer et al., "Bimolecular recombination coefficient
as a sensitive testing parameter for low-mobility solar-cell materials," Physical Review Letters, vol.
The radiative recombination coefficient
[B.sub.rad] for CIGS is set to [10.sup.-14] [cm.sup.3]/s such that the material is dominated by non-radiative processes.
Material GaAs [A.sub.l0.8] [Ga.sub.0.2]As Band Gap(eV) 1.42  2.09  Electron affinity (eV) 4.07  3.53  Dielectric permittivity(relative) 13.18  10.68  Eelectron mobility ([cm.sup.2]/Vs) Varied  212  Hole mobility ([cm.sup.2]/Vs) Varied  67  Radiative recombination coefficient
7.20E-10  7.50E-10  ([cm.sup.3]/Vs) Lattice constant a(A[degrees]) 5.65  5.64  Absorption coefficient Data from  Data from  Fig.
Total recombination coefficients
and machine-readable tables for Z=1 to 8," Monthly Notices of the Royal Astronomical Society, vol.