saturation current


Also found in: Dictionary, Thesaurus, Medical, Legal, Wikipedia.

saturation current

[‚sach·ə′rā·shən ¦kə·rənt]
(electronics)
In general, the maximum current which can be obtained under certain conditions.
In a vacuum tube, the space-charge-limited current, such that further increase in filament temperature produces no specific increase in anode current.
In a vacuum tube, the temperature-limited current, such that a further increase in anode-cathode potential difference produces only a relatively small increase in current.
In a gaseous-discharge device, the maximum current which can be obtained for a given mode of discharge.
In a semiconductor, the maximum current which just precedes a change in conduction mode.
(nucleonics)
The ionization current in a gas tube when the applied potential is large enough to collect all ions produced by ionizing radiation.
McGraw-Hill Dictionary of Scientific & Technical Terms, 6E, Copyright © 2003 by The McGraw-Hill Companies, Inc.
References in periodicals archive ?
Name-Specifications from data sheet AFP 235 Maximum Power (Pmax,m) 239.99 Wp Voltage at Maximum Power (Vmpp) 29.6 V Current at Maximum Power (/mpp) 7.94 A Open circuit voltage (Voc) 36.7 V Short circuit current (Isc) 8.48 A Nominal saturation current ([I.sub.0,n]) 3.65412e - 010 A Photovoltaic current ([I.sub.pv]) 8.490576 A Diode ideality factor (a) 1.3 Series resistance (Rs) 0.318 [OMEGA] Parallel resistance (Rp) 259.398 [OMEGA] Table 3: Properties of the materials used in AFP 235 module.
Nomenclature a: Diode's ideality factor I: Output current of the panel (A) [I.sub.s]: Diode saturation current (A) [I.sub.ph]: Panel photocurrent (A) G: Solar irradiation (W/[m.sup.2]) K: Boltzmann constant (J x [K.sup.-1]) q: Electron charge (C) R: The load (O) [R.sub.eq]: The resistance seen by the panel (O) [R.sub.s]: Series resistance (O) [R.sub.sh]: Shunt resistance (O) T: Junction temperature (K) V: Output voltage of the panel (V) [V.sub.O]: Output voltage of the boost converter (V) [I.sub.O]: Output current of the boost converter (A) F: Switching frequency (Hz) [DELTA]V: Input voltage ripple of the boost converter (V) [DELTA][V.sub.O]: Output voltage ripple of the boost converter (V) [DELTA][I.sub.L]: Inductor current ripple (A).
Caption: FIGURE 14: Control currents and rotor displacements in radial directions: saturation current is 5 A.
In order to obtain the voltage and current relationship of a PV cell, the photocurrent and reverse bias saturation currents in (2) need to be defined.
Figures 5 and 6 show the saturation current and leakage current as a function of gate voltage.
In which: q--electron charge; T--the absolute temperature of solar cell; k--the Boltzmann constant; A--diode curve factor; [I.sub.0]--reverse saturation current; [I.sub.sc]--short circuit current; U--equivalent diode voltage;
where [I.sub.s] is the saturation current, [V.sub.d] is the voltage across the Schottky barrier, [eta] is the ideality factor and [R.sub.s] is the series resistance of the diode.
This shows that the current is in reverse bias and remains constant at [I.sub.0], the saturation current, until the junction breaks down.
Here [I.sub.k] is the knee current of the high-level injection, [I.sub.r] and [n.sub.e] are the saturation current and emission factor of the generation/recombination effects, respectively.
[I.sub.dss] is the drain saturation current at zero [V.sub.gs], [V.sub.P] represents pinch-off voltage and GAM is the pinch-off slope parameter.