semiconductor heterostructure

semiconductor heterostructure

[¦sem·i·kən¦dək·tər ′hed·ə·rō‚strək·chər]
(electronics)
A structure of two different semiconductors in junction contact having useful electrical or electrooptical characteristics not achievable in either conductor separately; used in certain types of lasers and solar cells.
References in periodicals archive ?
The field of spintronics is devoted to create, store, manipulate at a given location, and transport coherent electron spin states through dilute magnetic semiconductors and conventional semiconductor heterostructure [1].
NIST researchers recently have measured the single electron spectrum of a semiconductor heterostructure containing InAs self-assembled quantum dots.
A superatom would be a semiconductor heterostructure -- that is, a spherical arrangement of two kinds of semiconductor materials, a core containing a large number of electron donors (atoms from which electrons are easily detached) surrounded by a "matrix" made of a material that has a high affinity for electrons.
The purpose of the present paper is to investigate the quantum spin transport in ring made of semiconductor heterostructure under the effect of infrared and ultraviolet radiations.
Creation of semiconductor heterostructures for high-frequency engineering and optoelectronics.
The ambitious goal of the project will be pursued by employing the unique physical properties of spatially indirect excitons confined in bilayer semiconductor heterostructures.
Characterization of semiconductor heterostructures and nanostructures, 2d ed.
In recent years, new types of semiconductor heterostructures, consisting of only one material in different crystal structures, such as wurtzite/zinc-blende heterostructures (heteropolytypic structures) have been investigated.
This text provides instruction to an audience already familiar with solid-state physics on how to calculate electronic, optical, and transport properties of semiconductor heterostructures, covering both theoretical and computational aspects.
Fabrication methods such as molecular beam epitaxy and metal-organic chemical vapor epitaxy allow the preparation of III-V semiconductor heterostructures with thickness control to within one-to-two atomic layers.
The Fraunhofer Society is planning a MOCVD epitaxy hall of semiconductor heterostructures for the extension of the Fraunhofer Institute for Applied Solid State Physics IAF in Freiburg in the TullastraE-e.

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