IBM said that the discovery indicates that silicon germanium
is outperforming other technologies as researchers develop smaller, faster chips.
The company plans to expand on its ideas for the user interface as well as the silicon germanium
Agarwal, "Amorphous silicon and silicon germanium
materials for highefficiency triple-junction solar cells," Solar Energy Materials and Solar Cells, vol.
Strained silicon technology provides high electron mobility by stretching the top silicon layer with an underlying layer of silicon germanium
IBM expects its silicon germanium
technology to be particularly attractive to manufacturers of small, low-end devices.
DERA will use the industry-leading Epi Centura to develop silicon germanium
(SiGe) applications for building high-performance devices.
A number of thermoelectric materials have been developed for various operating temperature ranges: bismuth telluride and bismuth selenide alloys for lower-temperature (approximately room temperature) applications, lead telluride alloys for intermediate 200[deg] to 500[deg] C) applications, and silicon germanium
alloys for high temperature (400[deg] to 1000[deg] C).
The 64-element phased array, built on a low-cost printed-circuit board, only consumed approximately 7-11 W of DC power in either its transmit (Tx) or receive (Rx) modes thanks to the UC San Diego high-performance system-on-a-chip (SoC) designs that uses a third-generation silicon germanium
(SiGe BiCMOS SBC18H3) process from TowerJazz.
This book, the first of three planned volumes, addresses advanced CMOS, silicon on insulator (SOI), silicon germanium
(SiGe) and silicon germanium
Chapter 4 walks the reader through an example of high frequency receiver front-end design in a commercially available silicon germanium
ON Semiconductor has introduced the NBSG72A, a Silicon Germanium
(SiGe) based, high-bandwidth, fully differential crosspoint switch with output level select capabilities.