silicon germanium


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silicon germanium

(SiGe) A semiconductor material made from silicon and germanium. Germanium is very similar to silicon, but when one layer is grown on top of the other to form the base of the transistor, the resulting transistor can switch faster and yield higher performance.

SiGe transistors are compatible with standard fabrication processes and are built on the same chip with silicon transistors to create high-frequency circuits. Only a handful of SiGe transistors are used in mobile phones, while tens of thousands are used in optical switches, DACs and ADCs. See silicon and strained silicon.
References in periodicals archive ?
IBM said that the discovery indicates that silicon germanium is outperforming other technologies as researchers develop smaller, faster chips.
The company plans to expand on its ideas for the user interface as well as the silicon germanium technology.
Agarwal, "Amorphous silicon and silicon germanium materials for highefficiency triple-junction solar cells," Solar Energy Materials and Solar Cells, vol.
Strained silicon technology provides high electron mobility by stretching the top silicon layer with an underlying layer of silicon germanium (SiGe).
IBM expects its silicon germanium technology to be particularly attractive to manufacturers of small, low-end devices.
DERA will use the industry-leading Epi Centura to develop silicon germanium (SiGe) applications for building high-performance devices.
A number of thermoelectric materials have been developed for various operating temperature ranges: bismuth telluride and bismuth selenide alloys for lower-temperature (approximately room temperature) applications, lead telluride alloys for intermediate 200[deg] to 500[deg] C) applications, and silicon germanium alloys for high temperature (400[deg] to 1000[deg] C).
The 64-element phased array, built on a low-cost printed-circuit board, only consumed approximately 7-11 W of DC power in either its transmit (Tx) or receive (Rx) modes thanks to the UC San Diego high-performance system-on-a-chip (SoC) designs that uses a third-generation silicon germanium (SiGe BiCMOS SBC18H3) process from TowerJazz.
We realized that when the top gallium arsenide phosphide layer completely covered the bottom silicon layer, the lower energy photons were absorbed by the silicon germanium the substrate on which the gallium arsenide phosphide is grown and thus the solar cell had a much lower efficiency, explained Sabina Abdul Hadi, a PhD student at Masdar Institute whose doctoral dissertation provided the foundational research for the step-cell.
This book, the first of three planned volumes, addresses advanced CMOS, silicon on insulator (SOI), silicon germanium (SiGe) and silicon germanium carbon.
Chapter 4 walks the reader through an example of high frequency receiver front-end design in a commercially available silicon germanium technology.
ON Semiconductor has introduced the NBSG72A, a Silicon Germanium (SiGe) based, high-bandwidth, fully differential crosspoint switch with output level select capabilities.