silicon homojunction

silicon homojunction

[¦sil·ə·kən ′hä·mə‚jəŋk·shən]
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Using bandgap engineering with optimized Ge profiling, SiGe HBTs can satisfy the product requirements for simultaneons high cut-off frequency [f.sub.t], low base resistance, high Early voltage and high breakdown voltage, which cannot be achieved by silicon homojunction devices.
On the other hand, silicon bipolar devices offer transconductance characteristics similar to GaAs HBTs but exhibit additional distortion characteristics due primarily to nonlinear base collector capacitance.(1) Another major difference between the GaAs heterojunction bipolar and the silicon homojunction bipolar configurations is the base of the HBT can be much more heavily doped than the emitter.