silicon homojunction

silicon homojunction

[¦sil·ə·kən ′hä·mə‚jəŋk·shən]
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t], low base resistance, high Early voltage and high breakdown voltage, which cannot be achieved by silicon homojunction devices.
1) Another major difference between the GaAs heterojunction bipolar and the silicon homojunction bipolar configurations is the base of the HBT can be much more heavily doped than the emitter.