stacking fault

stacking fault

[′stak·iŋ ‚fȯlt]
(crystallography)
A defect in a face-centered cubic or hexagonal close-packed crystal in which there is a change from the regular sequence of positions of atomic planes.
References in periodicals archive ?
In the initial stage of fatigue damage (crack initiation stage), micromechanical properties of materials can vary with respect to vacancy, dislocation, twin, stacking fault, and grain structure.
The intrinsic stacking fault energy has been traditionally used to describe the ease with which a metal plastically deforms by twinning in competing with dislocation-mediated slip.
Pietsch, "Determination of the stacking fault density in highly defective single GaAs nanowires by means of coherent diffraction imaging," New Journal of Physics, vol.
Among the topics are the influence of stacking fault energy on the twin spacing of copper and copper-aluminum alloys, the high-resolution transmission electron microscopy of dislocation core dissociations in gold and iridium, the dissociation of near-screw dislocations in Germanium and Silicon, and dislocations in shock-loaded titanium diboride.
However, some theoretical studies have also suggested contradictive results as the (100) or (110) slip planes (18) and (010) (19) for PPv, primarily because these examined only particular structure modifications or calculated the generalized stacking fault (GSF) energies of limited slip planes.
Among his topics are processing methods for nanomaterials, defect structure in low stacking fault energy nanomaterials, correlation between defect structure and mechanical properties of nanocrystalline materials, the thermal stability of defect structures, and relationships between microstructure and hydrogen storage properties in nanomaterials.
Special attention is paid to the lattice defects in low stacking fault energy nanomaterials and metal - carbon nanotube composites.
The Influence of Stacking Fault Energy on the Cold-Rolling Cu and Cu-Al Alloy: Structure and Mechanics Properties
Influence of Impurities on Stacking Fault Dynamics in SiC under External Loading (Vladislav Domnich and Richard A Haber).
In epitaxial silicon wafers, the most common crystallographic defect is the epi stacking fault (ESF).
Particularly high-interest topics at the conference (as identified in the preface) included extended defects like dislocations of stacking faults (given that micropipes can now be avoided almost entirely in SiC wafers); the development and fabrication of high power devices and systems for industrial applications (commercial aspects of SiC technology merited a dedicated news session); and graphene grown on SiC (this subject generated considerable excitement and filled three oral sessions).