stacking fault

stacking fault

[′stak·iŋ ‚fȯlt]
(crystallography)
A defect in a face-centered cubic or hexagonal close-packed crystal in which there is a change from the regular sequence of positions of atomic planes.
References in periodicals archive ?
The Influence of Stacking Fault Energy on the Cold-Rolling Cu and Cu-Al Alloy: Structure and Mechanics Properties
Influence of Impurities on Stacking Fault Dynamics in SiC under External Loading (Vladislav Domnich and Richard A Haber).
In epitaxial silicon wafers, the most common crystallographic defect is the epi stacking fault (ESF).
Among his topics are processing methods for nanomaterials, defect structure in low stacking fault energy nanomaterials, correlation between defect structure and mechanical properties of nanocrystalline materials, the thermal stability of defect structures, and relationships between microstructure and hydrogen storage properties in nanomaterials.
Special attention is paid to the lattice defects in low stacking fault energy nanomaterials and metal - carbon nanotube composites.
Since the first edition of this book, understanding of crystal defects such as dislocations, stacking faults, twin, grain and interphase boundaries and their effect on the mechanical and electrical properties of materials has grown enormously, and this has been accompanied by a total change in style of the way in which both research and teaching are carried out through the use of the fast digital computer.
The first volume contains papers that were presented in technical sessions on silicon carbide (SiC) bulk growth; SiC homoepitaxial, heteropolytic, and heteroepitaxial growth; physical properties and characterization issues including stacking faults, point defects, impurities, surfaces and interfaces, fundamental properties, and wafer mapping; and porous SiC and SiC nanoparticlses and nanowires.
11-14], more than half deal with inclusions, isomorphous replacements, twinning, stacking faults, vacancies, other point defects, and, of course, dislocations.
The presence of stacking faults and other mixed phases was revealed in transmitted second-harmonic generation (SHG) by the appearance of extra SHG polarization components that would not occur if the material had purely a single-phase hexagonal structure.
It was noted that because micropipes could now be almost completely suppressed in SiC wafers, extended defects such as dislocations or stacking faults had become the target as sources of degradation of device performance.
Deformation Twins and Stacking Faults in an AA5182 Al-Mg Alloy Processed by High Pressure Torsion
Additional co-authors are well-known researchers at the Naval Research Laboratory who have led the discovery and identification mechanisms for several prominent defects in SiC including Basal Plane Dislocations, stacking faults, and etch pit dislocations.