The semiconductor analyst David Kanter offers an interesting post in his real world technologies blog that describes how innovations such as strained silicon
, high-k gate dielectrics (Hf02) and metal-gate electrodes, double-patterning, and FinFETs have brought us from 90 nm to where we are today, with Intel pursuing the 10-nm node.
They focus on MOSFETs implemented in high-mobility substrates such as germanium, silicon germanium, strained silicon
, and ultra-thin germanium-on-insulator platforms combined with high-k insulators and metal-gate.
6 -- McPherson's high resolution spectrometer, Model 2061, for emission, luminescence, Raman (strained Silicon
), and high temperature plasmas easily measure more than 0.02 nanometer full width half maximum spectra.
Here researchers in chemistry, materials, physics, and other disciplines report their research and review the literature on such aspects as the nano-scale characterization and spectroscopy of strained silicon
, bone inspired nanocomposites, ultra-nanocrystalline diamond/amorphous carbon nanocomposite films, periodic non-oxide semiconductor-based organic-inorganic nanocomposites, and flexible transparent conducting nanocomposites.
Intel's 65nm processes combine higher-performance and lower-power transistors, a second-generation version of Intel's strained silicon
, eight high-speed copper interconnect layers and a low-k dielectric material, the company claims.
He joins Coventry-based AdvanceSis from Aixtron, where he was director of sales and marketing for Silicon Technology, being responsible for all aspects of SiGe, strained silicon
and other silicon platforms.
IQE has also been developing its strained silicon
tech- nology, which can be used to make faster computers, and believes that it is in a position to take a dominant role in this new market.
The deal gives AMCC access to all of the advanced copper, SOI, strained silicon
, and low-k chip making processes and the system on a chip technologies that IBM will be developing for future devices and systems.
7TH INNING STRETCH Strained silicon
has become ready for the production line at just the right time.
IBM has developed the first transistor using strained silicon
directly on insulator (SSDOI) technology that provides high performance while eliminating manufacturing problems.
After more than a decade of development, a new material technology, strained silicon
, is now in the early stages of being commercialized.