Other than negligible reverse recovery losses the signature feature of SiC Schottkys , the CoolSiC Schottky 1200 V G5 diode portfolio comes with best-in-class forward voltage (V F) as well as the slightest increase of V F with temperature and highest
surge current capability.
Larger maximum
surge current and total energy dissipation are better when comparing surge suppressor specifications.
Additionally, each diode can safely dissipate 80 A of 8/20-[micro]s
surge current with very low clamping voltages.
Under the high-speed switching operation, the
surge current from the capacitor [C.sub.ik] flows through the protection switch [Q.sub.k] because of no current limiting inductors.
This voltage across arrester isn't enough to causes conduction of large current through it and therefore the most part of
surge current flows through suppressor.
In the Liaodong Bay,
surge current flows out of the bay because the long time northwest wind leaves from the coast areas; then the surge level reduces because of no additional water in the bay.
Featuring a robust anode design, the TM3 series is 100 %
surge current tested (B, C, D, and E case sizes) and available with Weibull grading and Hi-Rel screening options.
The new VAL-MS-TI/T2 varistor-based lightning arresters from Phoenix Contact are rated for Type 1 lightning strike events with a measured 10/350 ps test current (limp) of 12.5 kA or Type 2 surge events with a measured 8/20 gs maximum discharge
surge current (Imax) of 50 kA.
They provide all mode
surge current capability and are offered with kA ratings of 25kA to 300kA per mode.
One of the methods used to study lightning effects on structures and systems consists of a simulation of lightning strike by injecting a
surge current from the generator attached to the structure [2-4].
[V.sub.A]: Voltage across [Z.sub.B] when passing
surge current [I.sub.A]
During the last eight years, Infineon has made a number of significant improvements to its SiC Schottky diode technology in areas such as
surge current stability, switching performance and in product cost, extending the benefits of SiC technology,' said Andreas Urschitz, vice president and general manager, Power Semiconductor Discretes at Infineon Technologies.
