Additional techniques are based upon the use of tantalum nitride
on silicon; and/or chromium silicide on silicon (among others).
The part features an intrinsic moisture-protected resistor element built on tantalum nitride
, tantalum silicide and ruthenium oxide are common resistor materials, although the materials may be changed to suit the resistivity and power handling requirements, temperature coefficient of resistance (TCR), and processing capabilities.
Using breakthrough ALD technology, the iCuB/S system provides the key to future copper nano-chips by enabling an ultrathin, conformal tantalum nitride
(TaN) barrier layer that is compatible with advanced low (kappa) dielectric films.
The RNCP series offers a low cost solution that eliminates the risk of sulfur contamination and the RNCS series provides an alternative to tantalum nitride
resistors that are used in harsh, humid environments.
Built using a self-passivated, moisture-resistant tantalum nitride
resistive film technology, the Vishay Dale Thin Film devices combine their high power rating with a low absolute TCR of A 25 ppm/AC and laser-trimmed tolerances down to A 0.
The system's revolutionary IMP (ion metal plasma) PVD (physical vapor deposition) technology enables the precise deposition of a thin, uniform and robust tantalum or tantalum nitride
barrier film followed by a copper seed layer.
Moisture withstanding performance of tantalum nitride
technology with lower cost
Built using a moisture-resistant tantalum nitride
resistive film technology, the new E/H (Ta2N) QPL resistors offer enhanced specifications for military and aerospace applications, including tolerances to 0.
One of the key components of a copper memory interconnect is the PVD tantalum nitride
(Ta(N)) barrier layer that provides the necessary copper diffusion resistance, as well as wettability for the subsequent copper seed layer.
Introduced in 1998, the Endura CuBS is the leading PVD(1) system for depositing the tantalum nitride
(TaN) barrier and copper seed layers that are critical to fabricating copper interconnect structures.
The iALD tantalum nitride
(TaN) film replaces PVD TaN as the barrier layer for copper, providing a reduction in line resistance due to the highly conformal and ultra-thin nature of the film.