The reaction mixture is stored in a high-pressure sealed container and synthesised by growing ultra-thin "nanowires" of tungsten oxide on the surface of tiny particles of tantalum nitride
Until now this has only been possible using expensive military-grade tantalum nitride
, tantalum silicide and ruthenium oxide are common resistor materials, although the materials may be changed to suit the resistivity and power handling requirements, temperature coefficient of resistance (TCR), and processing capabilities.
This is facilitated by a layer of resistive metallization of either nichrome or tantalum nitride
in a predetermined sheet resistivity and etched or laser trimmed to the value and tolerance required by the design.
Using breakthrough ALD technology, the iCuB/S system provides the key to future copper nano-chips by enabling an ultrathin, conformal tantalum nitride
(TaN) barrier layer that is compatible with advanced low (kappa) dielectric films.