equalizing
tensile stress in the two main panel directions (length and width) without changing the present bending stress, nominal thickness of plywood or the total number of layers.
The role of creep to reduce induced
tensile stress in restrained shrinkage has been recognised and included in methods to predict shrinkage cracking.
Tensile stress in bottom reinforcement is determined in quite sufficient range in all four cases (Fig.
Background--The veining defect in cores and molds stems from a
tensile stress exerted at the mold metal interface by a combination of contracting and expanding sand.
Deformation limits in CR modified concretes subjected to
tensile stress make up 60-80% of the maximal tensile strength in contrast to compressive stress (30%); after elastic deformations are exceeded, there are much lower plastic deformations before the destruction of concrete occurs.
FE calculations show that the maximum in-plane
tensile stress in regions close to the clamp faces is about 6 MPa under an applied mean shear stress of 13 MPa.
25 there is no response similarity for different cross sections and the PEP due to maximum
tensile stress changes are vary from a cross section to another.
Thus the failure occurred because i) the GFRP part was weak in the area experiencing high
tensile stress during normal use; and ii) irreversible internal damage initiated at a relatively low service load, and the structural damage kept increasing with continued use until failure.
The normal stress, shear stress and principle
tensile stress in the box girder cross-section of Xintan Bridge is calculated and analyzed by the space frame lattice model.
After the tensile crack generation, these tensile cracks opened immediately due to the
tensile stress acting perpendicular to the loading axis.
Tensile stress and strain plots graphically show the difference between the fiber types and processing methods, especially the higher strain at failure for the recycled corrugated container panels.
When deposited on top of the gate channel, the material created
tensile stress in the underlying silicon, thereby speeding up electron mobility there.
