equalizing tensile stress
in the two main panel directions (length and width) without changing the present bending stress, nominal thickness of plywood or the total number of layers.
The role of creep to reduce induced tensile stress
in restrained shrinkage has been recognised and included in methods to predict shrinkage cracking.
in bottom reinforcement is determined in quite sufficient range in all four cases (Fig.
Background--The veining defect in cores and molds stems from a tensile stress
exerted at the mold metal interface by a combination of contracting and expanding sand.
Deformation limits in CR modified concretes subjected to tensile stress
make up 60-80% of the maximal tensile strength in contrast to compressive stress (30%); after elastic deformations are exceeded, there are much lower plastic deformations before the destruction of concrete occurs.
FE calculations show that the maximum in-plane tensile stress
in regions close to the clamp faces is about 6 MPa under an applied mean shear stress of 13 MPa.
25 there is no response similarity for different cross sections and the PEP due to maximum tensile stress
changes are vary from a cross section to another.
Thus the failure occurred because i) the GFRP part was weak in the area experiencing high tensile stress
during normal use; and ii) irreversible internal damage initiated at a relatively low service load, and the structural damage kept increasing with continued use until failure.
The normal stress, shear stress and principle tensile stress
in the box girder cross-section of Xintan Bridge is calculated and analyzed by the space frame lattice model.
After the tensile crack generation, these tensile cracks opened immediately due to the tensile stress
acting perpendicular to the loading axis.
and strain plots graphically show the difference between the fiber types and processing methods, especially the higher strain at failure for the recycled corrugated container panels.
When deposited on top of the gate channel, the material created tensile stress
in the underlying silicon, thereby speeding up electron mobility there.