transconductance


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transconductance

[¦tranz·kən′dək·təns]
(electronics)
An electron-tube rating, equal to the change in plate current divided by the change in control-grid voltage that causes it, when the plate voltage and all other voltages are maintained constant. Also known as grid-anode transconductance; grid-plate transconductance; mutual conductance. Symbolized Gm ; gm .
A field-effect-transistor rating, equal to the change in drain current divided by the change in gate-to-source voltage that causes it, when the drain voltage and all other voltages are maintained constant. Symbolized gfs .
An amplifier parameter, equal to the change in output current divided by the change in input voltage that causes it. Symbolized gm .
References in periodicals archive ?
As the initial state, the values of all parameters were set accordingly: the values of transconductances are [g.sub.m1] = [g.sub.m2] = [g.sub.m3] = 1 mS, capacitors [C.sub.1] = 1 nF and [C.sub.2] = 2 nF, voltage gain A is equal to 1.
where [C.sub.i] (i = 1, 2, 3) and [g.sub.mj] (j = 1, 2, 3, 4, 5, 6, 7, 8) are integration capacitors and transconductance values, respectively.
proposed to boost the effective transconductance [G.sub.m] while keeping the intrinsic transconductance [g.sub.m] [15].
The input transconductance can be increased by using long-channel transistors and ensuring that the input transistor pair's bias current is significantly larger than the cascode transistor's bias current.
This active device consists of an Operational Transconductance Amplifier (OTA) and a voltage buffer.
The voltage differencing transconductance amplifier is consisting of two transconductance amplifiers [5].
We propose the use of an operational transconductance amplifier which has a gain of about 103 dB for a bias current of 9.5 [micro]A with [V.sub.DD] = 1.8 V and [V.sub.SS] = 0 V.
In this work, this multiplication is simply achieved using the MOS transistor transconductance equation.
The authors demonstrate that such chemically assembled atomic transistors exhibit high transconductance (lOpS), on-off ratio (~[10.sup.6]) and mobility (~17 [cm.sup.2] [V.sup.-1] [s.sup.-1]).
This is due to its excellent electrical and structural characteristics such as quasi-1D ballistic transport of electrons, higher drive current, large transconductance, near ideal subthreshold slope, low intrinsic capacitance, and strong covalent bonding [15].
III-V-on-Si GAA devices with a record peak transconductance at 0.5V has been achieved by optimizing both the channel epitaxy quality and the gate-channel passivation.

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