transistor characteristics

transistor characteristics

[tran′zis·tər ‚kar·ik·tə‚ris·tiks]
(electronics)
The values of the impedances and gains of a transistor.
McGraw-Hill Dictionary of Scientific & Technical Terms, 6E, Copyright © 2003 by The McGraw-Hill Companies, Inc.
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From these results, we can find that our results meet the needs of the novel transistor characteristics. The [I.sub.d10] is smaller than some comparison values but larger than others, and [I.sub.d11] is the same case.
As the Ga content increased further, the threshold voltage ([V.sub.TH]) swung toward positive and the current level difference between on and off-states became greater, clearly displaying transistor characteristics. These systematic variations including the [V.sub.TH] shift and the off-current reduction were possibly caused by the addition of Ga, because increasing the Ga content was expected to suppress carrier generation through oxygen vacancy formation and hence help achieve a lower off-current.
Intuitively, these ideal values cannot be obtained due to non-ideal bias generator and transistor characteristics. Furthermore, to reduce input referred noise values at Y and X port will deteriorate those values.
The real transistor characteristics are much more complex than any simplified model with lumped components, and certain parts of the nonlinearities of the real transistor characteristics which do not correspond directly to the lumped components in the circuit model have to be incorporated into the descriptions of the components in the simplified equivalent model.
Instead, we developed a generic model that accounts for the coupled electronic and orientational dynamics of the molecule." This simple and physically transparent model entirely reproduces the experimentally observed single-molecule transistor characteristics.
Transistor Characteristics. The I-V characteristics of the device is simulated by keeping gate voltage as constant for [V.sub.ds] = 0 to 10 V and 0-20 V as shown in Figures 3 and 4.
Key enhancements include updates to foundry partner AMS reference flows, more efficient legacy data format support through native OpenAccess (OA) support, embedding Magma's super-fast FineSim(TM) SPICE circuit simulation for faster and more efficient process modeling, the addition of several new advanced FlexCells that serve as process-independent analog building blocks, support of higher frequency transistor characteristics for RF design, increased capacity to simultaneously handle hundreds of multi-corner scenarios, parallel optimization through distributed implementation for faster runtime and better quality of results (QoR), and tight integration with Magma's digital implementation tool Talus(R) for more efficient top-level routing and chip finishing.
Topics include tool- related surface damage on wafers, the effects of backside circuit edit on transistor characteristics, wrong redundancy evaluation on DRAM devices, series capacitance in high-speed differential pairs, and a comparison of active and passive voltage contrast for failure localization.
Linearity, efficiency and power handling capability are also major concerns of power transistor characteristics.
The experimentally observed transistor characteristics are shown in Fig.