In 2002, he co-founded Innovative Silicon, developing a new floating-body single transistor memory
Top Z-RAM Technologist Driving the Next Frontier in Ultra-Dense, Single Transistor Memory
For years, companies have been struggling to commercialize the benefits of floating body memory, which promises a true single transistor memory
cell - the smallest, densest, and fastest type of memory possible.
Z-RAM's one transistor memory
bitcell is made possible by harnessing the Floating Body Effect (FBE) found in circuits fabricated using SOI (silicon-on-insulator) wafers.
In 2002 he co-founded Innovative Silicon, developing a new SOI single transistor memory
In leading-edge process geometries, 1T-SRAM can lower standby power and help avoid the increasing bitcell leakage of six transistor memory
designs for the very demanding requirements of next generation cellular designs and other mobile products.
With ESP-CV, the three companies achieved higher functional coverage and reduced the amount of time required to verify certain elements within their designs including multi-million transistor memory
In addition, the reduced chip size increases production yield compared to using traditional six transistor memory
, often by over 20%.