tunneling magnetoresistance

tunneling magnetoresistance

[‚tən·əl·iŋ mag‚ned·ō·ri′zis·təns]
(solid-state physics)
A type of magnetoresistance displayed by a trilayer thin-film structure consisting of two metallic ferromagnetic thin films sandwiching an insulating film that is thin enough (less than about 2 nanometers) that electrons can pass through it via quantum-mechanical tunneling. Also known as junction magnetoresistance.
References in periodicals archive ?
Both companies hold an extensive portfolio of IP that is further strengthened by this agreement including the assignment and licensing of MRAM patents from Seagate to Everspin as well as licensing of specific Tunneling Magnetoresistance, or TMR, patents from Everspin to Seagate.
A new tape head technology, called TMR (tunneling magnetoresistance) will significantly boost tape capacities and speeds for years to come.
The flexible MTJ devices yield significantly enhanced tunneling magnetoresistance of [approximately equal to]300% and improved abruptness of switching, as residual strain in the MTJ structure is released during the transfer process.
Assoc Prof Yang said, Our experiments showed that our devices tunneling magnetoresistance could reach up to 300 per cent its like a car having extraordinary levels of horsepower.
As will be described later, recent studies on TMR (tunneling magnetoresistance) and spintronics revealed that the spin polarization of emitted electrons from a ferromagnetic electrode (i.e., spin current) is an important issue and it is closely related to the interface magnetization.
Intensive studies on magnetic multilayers continued, for about a decade, until the appearance of the TMR effect (tunneling magnetoresistance).
Concerning enhancement of the MR ratio, the next breakthrough was obtained in the studies of tunneling magnetoresistance, TMR.
Quantum size effect and tunneling magnetoresistance in ferromagnetic semiconductor quantum heterostructures.
In those chips, the key performance measure, called tunneling magnetoresistance, stands at about 70 percent.
Han, "80% tunneling magnetoresistance at room temperature for thin AlO barrier magnetic tunnel junction with CoFeB as free and reference layers," Journal of Applied Physics, vol.
Stacks have been demonstrated with good magnetic memory characteristics, and a TMR (Tunneling magnetoresistance) ratio over 230% with TEL's unique perpendicular MTJ stack.
The trend of the tunneling magnetoresistance (TMR) is due to the spin-orbit scattering in the superconductor.