tunneling magnetoresistance

tunneling magnetoresistance

[‚tən·əl·iŋ mag‚ned·ō·ri′zis·təns]
(solid-state physics)
A type of magnetoresistance displayed by a trilayer thin-film structure consisting of two metallic ferromagnetic thin films sandwiching an insulating film that is thin enough (less than about 2 nanometers) that electrons can pass through it via quantum-mechanical tunneling. Also known as junction magnetoresistance.
References in periodicals archive ?
The flexible MTJ devices yield significantly enhanced tunneling magnetoresistance of [approximately equal to]300% and improved abruptness of switching, as residual strain in the MTJ structure is released during the transfer process.
Assoc Prof Yang said, Our experiments showed that our devices tunneling magnetoresistance could reach up to 300 per cent its like a car having extraordinary levels of horsepower.
Concerning enhancement of the MR ratio, the next breakthrough was obtained in the studies of tunneling magnetoresistance, TMR.
2004) Giant tunneling magnetoresistance at room temperature with MgO tunneling barrier.
Quantum size effect and tunneling magnetoresistance in ferromagnetic semiconductor quantum heterostructures.
In those chips, the key performance measure, called tunneling magnetoresistance, stands at about 70 percent.
Product Overview II-8 Nanotechnology II-8 Nanomagnetics II-8 Product Segments of Nanomagnetics II-8 Particulate Products II-8 Methods for Emission of Arrays II-9 Bulk Materials II-9 Thin Films II-9 Giant Magnetoresistance (GMR) or Colossal Magnetoresistance (CMR) II-9 Colossal Magnetoresistance (CMR) II-10 Applications of Giant Magnetoresistance II-10 Magnetic Microimagers Support Giant Magnetoresistance II-10 Spin Valve Multilayer Structure II-10 Tunneling Magnetoresistance (TMR) II-10 Ballistic Magnetoresistance (BMR) II-10 Sony Uses Polyester Thin Film Evaporated Metal Coating II-11
The spin polarization and the corresponding tunneling magnetoresistance (TMR) for a hybrid ferromagnetic/superconductor junction are calculated.
The trend of the tunneling magnetoresistance (TMR) is due to the spin-orbit scattering in the superconductor.
Using unique materials, the company produced more than a 70% change in tunneling magnetoresistance (TMR) between two stable states at room temperature.