vapor-phase epitaxy

vapor-phase epitaxy

[′vā·pər ¦fāz ′ep·ə‚tak·sē]
(solid-state physics)
The use of chemical vapor deposition to grow epitaxial layers. Abbreviated VPE.
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References in periodicals archive ?
As someone who refined the metalorganic vapor-phase epitaxy technique, the highly regarded researcher stated that he first became aware of his contributions to the field of applied physics when he saw how other institutes and industry were utilizing his research.
Zhilyaev et al., "Chloride vapor-phase epitaxy of gallium nitride on silicon: Effect of a silicon carbide interlayer," Technical Physics Letters, vol.
Stringfellow, "Organometallic vapor-phase epitaxy growth and characterization of Bi-containing III/V alloys," Journal of Applied Physics, vol.
Physical, chemical, and electrochemical methods have been carried out for achieving ZnO nanowires; some of these are metal-organic vapor-phase epitaxy, chemical vapor deposition, and hydrothermal deposition [7, 8].
The aligned and dislocation free GaN one-dimensional nanostructures have been fabricated using molecular beam epitaxy (MBE) [32,33], metal-organic chemical vapor deposition (MOCVD) [34-37], and hydride vapor-phase epitaxy (HVPE) [38, 39].